Top edge facet development in asymmetric grooves

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Top edge facet development in asymmetric grooves

The low pressure (20 mbar) organometallic vapour phase epitaxy (LP-OMVPE) of GaAs/GalnP in asymmetric grooves, patterned on (111)B GaAs substrates, has been examined. One of the characteristic features of this deposition is that facets develop along the top edges where the side wall planes meet the top surface. The origin of small facets at the top edge appears to be due to pre-growth condition...

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ژورنال

عنوان ژورنال: Surface Science

سال: 1995

ISSN: 0039-6028

DOI: 10.1016/0039-6028(95)01009-2